Publication

Byline

Location

US Patent Issued to Micron Technology on Sept. 8 for "Forward-looking determination of read voltage using memory cell patterns" (Italian, American Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,639, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Forward-looking determination of read voltage using memory ... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Non-volatile content addressable memory device having simple cell configuration and operating method of the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,640, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Non-volatile content addressable memory d... और पढ़ें


US Patent Issued to Micron Technology on Sept. 8 for "Microelectronic devices including interconnections, related memory devices and electronic systems" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,641, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices including interconnections, related... और पढ़ें


US Patent Issued to Micron Technology on Sept. 8 for "Elongated capacitors in 3D NAND memory devices" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,642, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Elongated capacitors in 3D NAND memory devices" was invente... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Method and system for adjustable top select gate control" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,643, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Method and system for adjustable top select g... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Program operations in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,644, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Program operations in memory devices" was inv... और पढ़ें


US Patent Issued to KIOXIA on Sept. 8 for "Semiconductor memory device with reduced write voltage using channel floating and capacitive coupling" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,645, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device with reduced write voltage using channel floatin... और पढ़ें


US Patent Issued to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Split-gate memory array and method for operating same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,646, issued on Sept. 8, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai). "Split-gate memory array and m... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Electronic device for manufacturing of semiconductor device and operating method of electronic device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,647, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Electronic device for manufacturing of semic... और पढ़ें


US Patent Issued to Sandisk Technologies on Sept. 8 for "Non-volatile memory with word line ramp sensing for memory cell tracking" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,648, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with word line ramp sensing for ... और पढ़ें